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FDS8449 40V N-Channel PowerTrench(R)MOSFET
December 2005
FDS8449
40V N-Channel PowerTrench(R) MOSFET
General Description
These N-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Features
* 7.6 A, 40V RDS(on) = 29m @ VGS = 10V RDS(on) = 36m @ VGS = 4.5V * * High power handling capability in a widely used surface mount package RoHS compliant
Application
* * Inverter Power Supplies
D D SO-8
D D
DD D D
5 6 7
4 3 2 1
Pin 1 SO-8
G SG S S SS S
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
40 20
(Note 1a)
Units
V V A W C
7.6 50 2.5 1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1b) (Note 1)
50 125 25
C/W
Package Marking and Ordering Information
Device Marking FDS8449 Device FDS8449 Reel Size 13'' Tape width 12mm Quantity 2500 units
(c)2005 Fairchild Semiconductor Corporation FDS8449 Rev B(W)
www.fairchildsemi.com
FDS8449 40V N-Channel PowerTrench(R)MOSFET
Electrical Characteristics
Symbol
EAS IAS BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
TA = 25C unless otherwise noted
Parameter
(Note 3)
Test Conditions
VDD = 40 V, ID = 7.3 A, L = 1 mH
Min
Typ
Max Units
27 mJ A
Drain-Source Avalanche Ratings
Drain-Source Avalanche Energy Drain-Source Avalanche Current
7.3 ID = 250 A
Off Characteristics
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
VGS = 0 V,
40 34 1 100 1 1.9 -5 21 26 29 21 760 100 60 1.2 9 5 23 3 18 10 17 6 11 29 36 43 3
V mV/C A nA V mV/C m
ID = 250 A, Referenced to 25C VDS = 32 V, VGS = 20 V, VGS = 0 V VDS = 0 V
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 10 V, ID = 7.6 A ID = 6.8 A VGS = 4.5 V, VGS= 10 V, ID = 7.6 A, TJ=125C VDS = 10 V, ID = 7.6 A
gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd
S pF pF pF ns ns ns ns nC nC nC
Dynamic Characteristics
VDS = 20 V, f = 1.0 MHz f = 1.0 MHz V GS = 0 V,
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 20 V, VGS = 10 V,
ID = 1 A, RGEN = 6
VDS = 20 V, VGS = 5 V
ID = 7.6 A,
7.7 2.4 2.8
Drain-Source Diode Characteristics
VSD trr Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IF = 7.6 A, IS = 2.1 A
(Note 2)
0.76 17 7
1.2
V nS nC
diF/dt = 100 A/s
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
50C/W when mounted on a 1in2 pad of 2 oz copper
b) 125C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper
2 Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
FDS8449 Rev A(W) www.fairchildsemi.com
FDS8449 40V N-Channel PowerTrench(R)MOSFET
Typical Characteristics
20
3 VGS = 10V 4.0V VGS = 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V 2.6
16 ID, DRAIN CURRENT (A)
12
6.0V
4.5V
2.2
1.8 3.5V 1.4 4.0V 4.5V 6.0V 1 10V
8
3.0V
4
0 0 0.5 1 1.5 2 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V)
0.6 0 4 8 12 ID, DRAIN CURRENT (A) 16 20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.07 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 7.6A VGS = 10V
ID = 3.5A
0.06
1.4
0.05
1.2
0.04
1
TA = 125 C
0.03
o
0.8
TA = 25 C
0.02
o
0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
0.01 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
Figure 3. On-Resistance Variation with Temperature.
20
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
VDS = 10V ID, DRAIN CURRENT (A) 15
VGS = 0V
10
TA = 125 C
o
1
25 C
o o
10 TA = 125 C 5
o o o
0.1
-55 C
0.01
-55 C
0.001
25 C 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 3.5
0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS8449 Rev A(W)
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FDS8449 40V N-Channel PowerTrench(R)MOSFET
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V)
ID = 7.6 A VDS = 10V 30V
1000 f = 1 MHz VGS = 0 V 800 CAPACITANCE (pF)
8
20V
Ciss
600
6
4
400 Coss 200 Crss
2
0 0 4 8 Qg, GATE CHARGE (nC) 12 16
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 35 40
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT 50
Figure 8. Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
100 1ms 10ms 100ms 1s 10s DC
-ID, DRAIN CURRENT (A)
10
40
SINGLE PULSE RJA = 125C/W TA = 25C
30
1
VGS = 10V SINGLE PULSE o RJA = 125 C/W TA = 25 C
o
20
0.1
10
0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
50
100
SINGLE PULSE RJA = 125C/W TA = 25C
I(pk), PEAK TRANSIENT CURRENT (A)
40
30
I(AS), AVALANCHE CURRENT (A)
TJ = 25 C
10
o
20
10
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
1 0.01
0.1 1 tAV, TIME IN AVANCHE(ms)
10
Figure 11. Single Pulse Maximum Peak Current.
Figure 12. Unclamped Inductive Switching Capability.
FDS8449 Rev A(W)
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FDS8449 40V N-Channel PowerTrench(R)MOSFET
Typical Characteristics
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5
RJA(t) = r(t) * RJA
0.2
RJA = 125 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
o
0.1
0.1 0.05 0.02 0.01
0.01
SINGLE PULSE
0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000
Figure 25. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS8449 Rev A(W)
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I17

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